Abstract
AES analysis of thin films of metal fluorides is a difficult problem due to charging and decomposition of such films under electron bombardment. We have developed a simple algorithm for a reliable quantitative AES analysis of metal fluoride thin films (BaF 2 in our work). The relative AES sensitivity factors for barium and fluorine were determined from BaF 2 single-crystal samples. We have investigated the dependence of composition and stability of barium fluoride films on the substrate temperature during film growth. We found that the instability of BaF 2 films grown on GaAs substrates at high temperatures (> 525°C) is due to a loss of fluorine. Our results show that, under the optimal electron exposure conditions, AES can be used for a quantitative analysis of metal fluoride thin films.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
