Abstract
In this work, we demonstrate the first fully printed WSe 2 resistive random access memory (RRAM) fabricated using aerosol jet printing approach from few layers WSe 2 suspended solution at room temperature on flexible kapton substrate. The printed WSe 2 RRAM exhibits forming free, unipolar behaviour, sub 1-V switching voltage, 2 orders high resistance state (HRS)/low resistance state (LRS) ratio, and large LRS retention time > 2.5 hours. Furthermore, the WSe 2 RRAM exhibits both volatile and non-volatile switching behaviour with a transition set current of 2 µA. In addition, the WSe 2 RRAM retains its functionality even after flexing down to a bending-radii of 5 cm, thus showing suitability for its use as embedded memory in conformal electronics system.
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