Abstract

The analytical electron microscope is particularly well suited for the characterization of many types of defects observed in semiconductor materials. One type of common defect which has been shown to occur in some devices is an electrically-active rod defect which has a detrimental effect on some properties. In the present AEM investigation Si devices which exhibited a significant degradation in certain electrical properties (excess junction leakage) were examined in order to ascertain the cause of this phenomenon.The starting material in the process was n-type (100) silicon wafers. The initial processing step was the growth of 200nm of LPCVD SiO2. During the processing sequences wafers were subjected to temperatures up to 900°C.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.