Abstract
The analytical electron microscope is particularly well suited for the characterization of many types of defects observed in semiconductor materials. One type of common defect which has been shown to occur in some devices is an electrically-active rod defect which has a detrimental effect on some properties. In the present AEM investigation Si devices which exhibited a significant degradation in certain electrical properties (excess junction leakage) were examined in order to ascertain the cause of this phenomenon.The starting material in the process was n-type (100) silicon wafers. The initial processing step was the growth of 200nm of LPCVD SiO2. During the processing sequences wafers were subjected to temperatures up to 900°C.
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