Abstract
We demonstrate versatility of the four-wave mixing technique in investigating non-equilibrium carrier dynamics in semiconductor crystals and epitaxial structures. Measurements of the effective diffusion coefficient in the presence of a light-induced space charge field have allowed us to determine the photoconductivity type of photorefractive CdTe and InP crystals doped with deep impurities. Hole mobility values of μh=(96±22)cm2/Vs in CdTe and μh=(152±16)cm2/Vs in InP have been found from the ambipolar diffusion coefficient. Studies of a number of differently grown GaN layers with dislocation density ranging from 106 to 1010cm−2 have revealed a correlation of the longer carrier lifetimes with the smaller dislocation density. Competition between radiative and non-radiative recombination channels has been observed in low dislocation density HVPE-grown bulk-like GaN.
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