Abstract
In this work, the AlGaN/AlGaN superlattices (SLs) electron blocking layer (EBL) is designed to replace conventional AlGaN EBL in the AlGaN-based deep-UV light-emitting diodes (DUV-LEDs). The simulation results show that the DUV-LEDs with SLs possess higher emission power and internal quantum efficiency as compared to those with conventional EBL, which is attributed to the suppression of electron leakage and the enhancement of hole injection efficiency due to the alleviated strain force and the appropriately modified energy band caused by SLs EBL. The results also demonstrate that the efficiency droop is markedly reduced when the SLs EBL is adopted.
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