Abstract
Low-cost, compact, and coherent X-rays sources would enable exciting applications such as biomedical imaging of soft tissue and real-time visualisation of molecules at a widespread scale. A promising approach to implement such an X-ray source is based on inverse Compton scattering of a series of nanostructured electron sheets accelerated to relativistic speeds. Photon-triggered field emission arrays can readily produce planar arrays of electron bunches with pC-level sheet charge at high repetition rates using intense laser pulses. In this article, the performance of single-crystal, ultrafast, photon-actuated silicon field emitter arrays is investigated for varying emitter height. Charge vs. incident photon pulse energy characteristics and quantum efficiency of the devices are reported.
Highlights
Conventional X-ray imaging is based on absorption, i.e., on registering the spatial change in the intensity of an X-ray beam after passing through the object being imaged [1]
These devices are made using standard CMOS batch fabrication processes, are stored at atmospheric pressure, and can be operated at lower vacuum levels compared to standard photocathodes with no degradation; in addition, the structure of the cathode shapes the emission as a series of planar arrays of electron bunches, which is essential for the coherent X-ray source approach we described
In a recent article we reported the effect of emitter pitch scaling on the performance of the field emitter arrays [9]; in this article we investigate the effect of varying the emitter height on the performance of the field emitter arrays; we provide charge vs. incident laser pulse energy characteristics as well as estimate the quantum efficiency of the cathodes
Summary
This content has been downloaded from IOPscience. Please scroll down to see the full text. Ser. 557 012055 (http://iopscience.iop.org/1742-6596/557/1/012055) View the table of contents for this issue, or go to the journal homepage for more. Download details: IP Address: 131.169.239.204 This content was downloaded on 11/12/2014 at 08:20 Please note that terms and conditions apply. C Dong, M Swanwick, P D Keathley, F X Kärtner and L F Velásquez-García Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139, USA 2 Microsystems Technology Laboratories, Massachusetts Institute of Technology, 77. Massachusetts Avenue, Cambridge, MA 02139, USA 3 Center for Free-Electron Laser Science, DESY and Department of Physics, University of Hamburg, Notkestralse 85, D-22607, Hamburg, Germany
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