Abstract
In the perovskite-type manganese oxides, multi-degrees of freedom such as charge, spin, orbital and crystal lattice coexist simultaneously, and the strong completing interactions among them result in a series of novel physical phenomena such as colossal magnetoresistance effect, giant magnetic entropy effect, metal-insulator tran- sition, electronic phase separation and charge/orbital ordering, which make them become attractive issues in con- densed matter physics. Advances in integration and miniaturization of the electronic devices have resulted in their feature sizes continued to be decreased, and now the feature sizes of electronic devices based on perovskite-type manganese oxides are down-scaled into nanometered sizes. At nanoscale perovskite-type manganese oxides exhibit apparent size effects and possess the electrical and magnetic transport properties that are different from their bulk and film counterparts, which have important applications in the fields of a new generation of microelectronic de- vices. In recent years, many advances have been made in fabrication, microstructural characterization electrical and magnetic property measurements of the low-dimensional perovskite manganite nanostructures, and also in the
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