Advances on 45nm SiGe-Compatible NiPt Salicide Process

Abstract

NiPt self-aligned silicide (salicide) has become a major candidate for the 45nm node due to its better thermal stability and the surface morphology of NiSi on Si substrate [1,2]. SiGe has been proposed for PMOS strain engineering [3]. The relevant SiGe oxidation behavior [4], reaction with platinum [5] and thermal stress behavior [6] are important factors in developing a process for 45nm NiPt salicide over SiGe stressor. These concerns require the review of the current process for NiPt to verify its compatibility and extendibility.