Abstract
Microwave plasma chemical vapor deposition (MPCVD) has received tremendous research interest in fabrication of carbon nanotubes (CNTs) due to its unique advantages of high reactivity, rapid heating, no pollution, good controllability, etc. It would be meaningful to summarize the efforts that have been devoted in this area. Up to now, no such review has been seen in the literature. In this review, a summarization and discussion of the MPCVD devices applied in CNTs fabrication are firstly given, followed by the discussion on effect and affecting mechanisms of H2 plasma pretreatment, nitrogen atoms in the reacting gases and microwave power. Notably, the parameters of as-synthesized CNTs products and the corresponding synthesizing MPCVD conditions are listed out. Finally, the capabilities of MPCVD in facilitating atmospheric-pressure, low-temperature and in situ growth of CNTs are reviewed. This review can give a comprehensive grasp of current progress and understanding of MPCVD in preparation of CNTs and may provide a useful guidance for readers to design their fabricating systems to obtained required CNTs using MPCVD.
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