Abstract

Triple junction photo diodes are a type of photo diodes where three pn-junctions are vertically stacked on top of each other. Each of these pn-junctions has a distinctive spectral responsivity. Therefore, this type of photo diode is very useful for attaining a color sensitive photo diode for sensor applications. These diodes can be implemented in different standard semiconductor processes. In this work we compare three different implementations in BiCMOS (0.6 μm) and CMOS (90 nm and 0.35 μm) processes.

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