Abstract
The influence of vacancy supersaturation installed by RTA pre-treatments in CZ silicon wafers on oxide precipitate nucleation was investigated in the temperature range 700-1000 {degree sign}C. Precipitation is enhanced at 800 {degree sign}C and increases with increasing vacancy concentration. Getter efficiency tests for Cu and Ni have shown that the threshold value of the normalized inner surface is shifting to higher values for increasing RTA temperature. This can be explained by a morphological change of the oxide precipitates with increasing vacancy concentration from plate-like to spherical shape.
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