Abstract
This paper presents the evolution, state of the art, and prospective future of Silicon-Carbide (SiC) based power electronics conversion for shipboard electrical power systems. The latter, having fully profited from the integrated power system (IPS) all-electric ship concept, now face the challenge of an ever increasing electrical payload, with enhanced service and advanced sensors and weapon systems that are forecasted to surpass the onboard propulsion power in next generation ships. Power density has accordingly become crucial in this development, and SiC, with its innate high-voltage, high-frequency and high-temperature characteristics, the sought solution. The Office of Naval Research (ONR) together with the Defense Advanced Research Projects Agency (DARPA) have accordingly devoted an immense effort towards the development of 10 kV SiC MOSFETs and Junction-barrier-Schottky (JBS) diodes, having successfully demonstrated the capabilities of this technology in several applications thus far. Furthering this effort, ONR is presently directing the development of SiC-based PEBB units for next-generation shipboard systems, embodying the future of this concept. This technological evolution, as well as the challenges set forth by SiC-based power conversion, represent the mainstay of this paper.
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