Abstract
Resist technologies for fabricating quarter-micron patterns by KrF lithography have been studied We developed a novel chemically amplified (CA) positive resist. To improve environmental stability, we investigated the effect of using an organic base in CA resist on patterning characteristics. Using these technologies, we can successfully fabricate 0.24-μm gate patterns whose accuracy is less than ±10% in LSI fabrication. We have also developed a new resolution enhancement technique based on the balance in the intensity and the phase between the 0th-order rays and the rays diffracted from a line pattern. It is clarified that an organic base additive improves resolution of CA resist to less than 0.1μm.
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