Abstract
This paper reviews the original achievements and advances regarding the field effect transistor (FET) fabricated from one of the most studied transition metal dichalcogenides: two-dimensional MoS2. Not like graphene, which is highlighted by a gapless Dirac cone band structure, Monolayer MoS2 is featured with a 1.9 eV gapped direct energy band thus facilitates convenient electronic and/or optoelectronic modulation of its physical properties in FET structure. Indeed, many MoS2 devices based on FET architecture such as phototransistors, memory devices, and sensors have been studied and extraordinary properties such as excellent mobility, ON/OFF ratio, and sensitivity of these devices have been exhibited. However, further developments in FET device applications depend a lot on if novel physics would be involved in them. In this review, an overview on advances and developments in the MoS2-based FETs are presented. Engineering of MoS2-based FETs will be discussed in details for understanding contact physics, formation of gate dielectric, and doping strategies. Also reported are demonstrations of device behaviors such as low-frequency noise and photoresponse in MoS2-based FETs, which is crucial for developing electronic and optoelectronic devices.
Highlights
TMDCs (MoSe2, MoTe2, WS2, and WSe2, etc.) are well studied layered materials with sizable bandgap, which can be changed from bulk to layered form, resulting in unique physical properties that are expected to be employed in future semiconducting devices [1, 2]
We have reviewed state-of-the-art approaches in MoS2 field effect transistor (FET), such as progresses on manufacturing of MoS2 FETs, MoS2 FET-based memory devices, and MoS2 FET-based sensors
To understanding the contact physics based on Schottky barrier, different species of metals utilized to achieve high-performance n-type and p-type MoS2 FETs are reviewed, and optimization of ferromagnetic contact for spintronics applications are discussed too
Summary
TMDCs (MoSe2, MoTe2, WS2, and WSe2, etc.) are well studied layered materials with sizable bandgap, which can be changed from bulk to layered form (indirect to direct transition), resulting in unique physical properties that are expected to be employed in future semiconducting devices [1, 2]. Controllable valley polarization of MoS2 layered material suggests its potential in valleytronic devices [20, 21]. Several research groups have investigated nanostructures of MoS2 in fabricating MoS2 devices, including nanosheet and nanoribbon transistors [23,24,25]. Bandgap of MoS2 layered structure varies from 1.2 eV for indirect bandgap to 1.9 eV for direct bandgap [26], playing a critical role in the development of future semiconductor devices, esp. Since the first investigation of single-layer MoS2-based transistor and MoS2-based FET structure has become an important issue in electronic and optoelectronic devices evolution, additional knowledge in this respect is necessary for enhancing the performance of MoS2-based FET in future electronic and optoelectronic devices
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