Abstract
ABSTRACTIn this article, we review the recent progress on GaAs MOSFET's using in-situ MBE-grown Ga2O3(Gd2O3) as the gate dielectric. Both depletion-mode (D-mode) and inversion-mode (I-mode) GaAs MOSFET's with negligible drain current drift and hysteresis are demostrated. The absence of drain current drift and hysteresis indicates that the excellent stability of the oxide and low oxide/GaAs interface state density have been achieved. The drain current density and transconductance are about one order of magnitude higher than the best previous reported data in the literature for an inversion-mode GaAs MOSFET. Excellent high frequency and power performances were also measured from the depletion-mode devices. These improvements are attributed to the excellent Ga2O3(Ga2O3) oxide properties and novel processing techniques.
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