Advances in fast 4H–SiC crystal growth and defect reduction by high-temperature gas-source method

Abstract

This paper reviews recent progress in the development of high-speed 4H–SiC bulk crystal growth technology using the high-temperature gas-source method (high-temperature chemical vapor deposition). Vertical-type reactors capable of growing SiC bulk crystals of 50–75 and 100–150 mm in diameter have been developed, as have reactor configurations and growth conditions to achieve a high growth rate and material quality. Using the reactors, high growth rates up to or exceeding 3 mm/h have been achieved by employing an H2–SiH4–C3H8 gas system with high partial pressures of source gases and high growth temperature of 2500–2550 °C. It is also confirmed that the dislocation densities decline significantly in the direction of growth under proper growth conditions. Key factors for enhancing growth rate and improving crystal quality in the growth process are discussed.