Abstract
AbstractChemically doped graphene materials are fascinating because these have different desirable attributes with possible synergy. The inert and gapless nature of graphene can be changed by adding a small number of heteroatoms to substitute carbon in the lattice. The doped material may display superior catalytic activities; durable, fast, and selective sensing; improved magnetic moments; photoresponses; and activity in chemical reactions. In the current review, recent advances are covered in chemically doped graphene. First, the different types of heteroatoms, their bonding configurations, and briefly their properties are discussed. This is followed by the description of various synthesis and analytical methods essential for assessing the characteristics of heterographene with specific focus on the selected graphene materials of different dopants (particularly, single dopants, including N, B, S, P, first three halogens, Ge, and Ga, and codopants, such as N/O), and more importantly, up‐to‐date applications enabled by the intentional doping. Finally, outlook and perspectives section review the existing challenges, future opportunities, and possible ways to improve the graphitic materials. The goal is to update and inspire the readers to establish novel doped graphene with valuable properties and for current and futuristic applications.
Highlights
Doped graphene materials are fascinating because these have amazing chemical stability, flexibility, light different desirable attributes with possible synergy
To exploit the potential of graphene doping to the maximum, it is critical to understand the different attributes of doped graphene in detail, such as the topography, morphology, quality, number of layers, and the doping system, because these characteristics strongly impact the material’s properties.[41,69,74]
Hofer et al demonstrated nitrogen doping by irradiating nitrogen ions onto graphene on a transmission electron microscopy (TEM) grid, and atomic resolution imaging confirmed that the doped nitrogen prefers to bind with three carbon atoms.[99]
Summary
Foreign dopant atoms can alter the properties of graphene. doping has further opened the door to many graphene-based applications including electronics[38] and sensing[39] owing to the distinct nature of each dopant.[40,41] These impurity atoms display unique bonding configurations in the graphene lattice (see Figure 1i), endowing the graphene with distinctive properties. Sulfur oxide structures are frequently observed.[40] Note that some foreign atoms can display the same valence but different physical arrangements: some stay in the graphene plane, whereas others are out-of-plane or even overhanging.[14] For instance, P exhibits the same three bonding forms on graphene as N (graphitic, pyridinic, and pyrrolic), the graphitic form of P is a pyramidal overhang, whereas that of N is planar.[41,43] In the case of Si doping, an analogous overhang structure was observed, accompanied by a remarkable distortion of the planar structure of graphene. When doped together they preferentially form B-N bonds and even hexagonal patches (h-BN) in pristine graphene system.[56,57] These integrated B-N bonds cancel out the doping effect, and the material behaves more like pristine graphene
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