Abstract
The focus of this work is to evaluate the suitability and substrate potential of Cd0.9Zn0.1Te and Cd0.96Zn0.04Te crystals grown by the traveling heater method (THM). THM-grown Cd0.9Zn0.1Te crystals used for gamma spectroscopy have shown very good spectral performance owing partly to the very low concentration of Te inclusions and precipitates. Inspection in the infrared (IR) of annealed THM-grown CdZnTe wafers reveals no inclusions >3 μm, and Fourier-transform infrared measurements show IR transmission values in excess of 60%. Wafer etch pit density values are typically less than 4 × 10−4 pits/cm2, and double-crystal x-ray rocking-curve measurements show full-width at half-maximum values approaching 40 arcsec. 〈211〉 wafers have been produced with off orientation within 0.3°. (111)-Oriented, seeded THM growth runs have the ability to provide 10 60 mm × 60 mm × 2 mm wafers from a 75-mm-diameter boule or 20 90 mm × 90 mm × 2 mm wafers from a 100-mm-diameter boule.
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