Abstract
This paper presents a detailed study of the advancements in InAs/GaSb Superlattice (SL) infrared detectors, highlighting the significant progress made in material development and optimization techniques. The research begins with an overview of the historical developments, particularly the emergence of Tape InAs/GaSb binary II superlattice, which has revolutionized Third-Generation Infrared Focal Plane Arrays. A key focus is the optimization of fabrication processes, including temperature control and the V/III beam flux ratio, which are critical for enhancing the quality and efficiency of SL infrared detectors. The paper also explores the selection of superlattice interfaces, crucial for reducing strain and improving infrared absorption. Looking ahead, the study outlines future directions for SL infrared detectors, such as the exploration of new materials, incorporation of quantum well technology, and advancements in miniaturization and integration techniques. These developments aim to increase the stability, sensitivity, and overall performance of infrared detectors.
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