Abstract
AbstractThis paper presents an investigation on SIMS profile quantification for ultra‐shallow profiles. New configuration for the Cesium and Oxygen sources on the CAMECA IMS Wf tool provides SIMS profiling capability at 150 eV impact energy with a sputter rate of 1 and 2 nm/min for the Cs+ and O2+ primary beams, respectively. Results for as‐implanted B, P and As profiles using extremely low impact energy (EXLIE) sputtering conditions are compared with HR‐RBS and ERDA profiles. Copyright © 2010 John Wiley & Sons, Ltd.
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