Abstract
AbstractNorthrop Grumman Corporation has been developing 10 kV SiC MOSFETs and Junction Barrier Schottky diodes for application to a 13.8 kV 2.7 MVA solid‐state power substation. The design of half‐bridge power modules has extensively used simulation, from electron‐level device simulations to the system‐level trade studies, to develop the most efficient module for use in the SSPS.
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