Advanced sensor technologies for high performance infrared detectors

Abstract

For high performance IR imaging and seeker systems AIM has established a high yield and reproducible HgCdTe detector technology. For continuous improvement of detector performance, yield and reliability, key processes have been optimized and new approaches have been developed. By a superior CdZnTe Bridgman growth process, dislocation densities < 1×10 5 cm −2 in substrate and epitaxial layer are achieved for all substrates, ensuring high performance focal-plane-arrays, particularly for λ CO =11.5 μ m arrays. A new guard ring approach for planar diodes, created by a n +-region in pixel spacing area reduces pixel crosstalk and improves modulation transfer function. For long linear arrays, a multichip-module-technique has been developed, which meets the demands for high temperature-cycle-reliability. In addition, a cycle-to-failure model has been established by cooldown tests on AIM-FPA's to predict cycle-to-failure at existing FPA approach or maximum allowable strain at demanded cycles-to-failure specification.