Abstract
In semiconductor quantum dot structures major macroscopic electronic and optical material properties can be engineered by geometric parameters on the nanoscale domain. In this paper an overview will be given on advanced layer designs for high power quantum dot lasers. Advanced designs based on tunnel injection quantum wells allow a significant improvement of the characteristic temperature (To=200 K). In addition a strong reduction of the alpha-factor is expected, which may allow in future to overcome filamentation problems in high brightness high power lasers.
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