Abstract
An advanced organic polymer material of k = 2.2 has been successfully integrated in Cu lines with dielectric spacing from 80 to 20 nm. Cu lines with both TaN/Ta barrier and no barrier were fabricated. Current–voltage (I–V) and time dependent dielectric breakdown (TDDB) measurements were performed to study the scalability of this material. In the case of TaN/Ta barrier, no TDDB degradation was observed at 100 °C as the dielectric spacing changed from 80 to 30 nm. In the case of no barrier, TDDB performance at 100 °C was better than that of SiO2 without a barrier. However, TDDB at 200 °C showed a clear degradation. In contrast, no such degradation was present when TaN/Ta barrier was used.
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