Abstract
AbstractIn keeping with the trend of progressively shrinking device features, future generation advanced Logic and DRAM devices will require shallower junction depths and poly thickness and also higher doses compared to their current day counterparts. Present monomer based beamline technology suffers decreasing throughput during this transition as a result of space charge limitations. Plasma doping is a well characterized alternative that not only meets the doping requirements for <70 nm ITRS DRAM and Logic technology nodes but also features superior throughput levels that are largely energy insensitive. The simplicity of the Plasma doping tool design and evolution in process control offer a promising future for production worthiness of this technique. Key challenges for adoption of plasma doping tools in mainstream doping production are dose and contamination control. In this article, we report on the plasma modeling and diagnostic approaches used to optimize reactor design and describe how a closed loop faraday dose monitoring system is utilized to ensure dose repeatability. This combined modeling, diagnostics and sensor approach, which will be validated with on‐wafer measurements, enables the adoption of plasma doping in a mass production environment. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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