Abstract
Analytical electron microscopy techniques are used to investigate elemental distributions across high-k dielectric stacks with metal gates. Electron energy loss spectroscopy results from Si(100)/SiO2/HfO2/TiN and Si (100)/SiO2/HfO2/TiN/poly-Si gate stacks show evidence of interface reactions having occurred at the TiN/poly-Si interface and possibly at the HfO2/TiN interfaces. As such, this technique offers unique capabilities to further improve understanding of the work function behavior of metal gate electrode/dielectric stacks to be used in future CMOS technologies.
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