Advanced model of silicon edgeless detector operation

Abstract

The progress in silicon edgeless strip detectors became evident recently when the current terminating structure was proposed and successfully realized in p-on-n Si edgeless detectors for the TOTEM experiment at CERN. In this study the key characteristics of the structure - potential and electric field distributions at the detector sensitive diced edge are considered within the framework of two models — the resistive and amorphous edge layers. The surface potential distributions predicted by these models are compared to the experimental profiles measured by two methods — Conductive MicroProbe Technique and Scanning Transient Current Technique. It is shown that the experimental distributions correspond closely to the amorphous edge model. This advanced model of edgeless detector operation is applied to make predictions on irradiated detector characteristics and will be used for the development of the radiation hard version of edgeless detectors for the TOTEM experiment.