Abstract
The effect of radiative heat transfer, in horizontal chemical vapor deposition reactors, on the upper wall temperature and the formation of parasitic GaAs and As deposits is studied in detail. A multi-band model is developed, including the interference of thermal radiation. It is shown that the interference phenomenon leads to a significant additional decrease of the wall temperature that, in turn, results in a substantial diminution of the deposition rate of the GaAs layer. The As film deposited on the reactor wall results in a more significant decrease of the wall temperature, of about 130 K.
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