Abstract
In this paper we demonstrate high-power GaAs-based and InP-based superluminescent diodes (SLD) with tilted waveguides emitting in 8xx nm and 15xx nm spectral ranges respectively. The analysis of devices with different cavity lengths emphasizes the tradeoff between output power and spectral width. Power levels of about 200 mW for 820 nm SLDs and about 100 mW for 1590 nm SLDs have been demonstrated for longer cavity devices. Spectral modulation was less than 6-7% at 70-80 mW output power for both 8xx and 15xx SLDs. Simple model proposed for evaluation of spectrum modulation for both GaAs and InP devices based on semi-empirical approach is in agreement with experimental observations.
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