Abstract
In this paper we discuss the advantages offered by GaN HEMT technology in the design of narrow- and wideband high efficiency power amplifiers. On one side, we focus on the possibility of applying second harmonic tuning techniques without degradation of power performances, thanks to the GaN devices' high breakdown voltage. On the other hand, we discuss the impact of the high power density and consequent size reduction in GaN devices for the design of wideband power amplifiers. Three design examples are shown, to enforce the given considerations.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.