Abstract
System in Package (SiP) has become a popular technology along with the tendency of functionality and portability for electronic devices. Due to the complex design, dimension, and materials in SiP system, some of traditional failure analysis methods are not applicable any more, or have to be improved to meet the specific requirements of SiP structures. In this paper, some advanced techniques for failure analysis in SiP are introduced, including 3D X-ray microscopy, Lock-In Thermography (LIT), Photon Emission Microscopy (PEM) and Focus Ion Beam (FIB). 3D X-ray microscopy is a powerful method to display the virtual cross-section of failure structures, LIT and PEM are used to locate electrical defects. FIB cross sectioning preparation plays an important role in mechanism analysis. Experimental results show that these advanced techniques effectively suit for SiP defect location and mechanism analysis.
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