Abstract
The acceleration voltage dependence of electron-beam (EB) lithography was investigated. A low acceleration voltage is suitable for a mask (reticle) of several magnifications, because the proximity effect correction is not required. A reticle writing system EX-8 with an acceleration voltage of 12.5 to 20 kV has been developed. A high acceleration voltage is preferable for the direct writing of fine patterns. A direct writing system EX-7 with a typical acceleration voltage of 40 kV has been developed. A new shaped beam calibration method and a new astigmatism correction method have enabled the EX-7 to write a pattern with 0.1 μm. High accuracy shaped beam calibration and alignment as required by small patterns were realized for a high acceleration voltage.
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