Abstract
Stealth Dicing (SD) was developed to solve such inherent problems of dicing process as debris contaminants and unnecessary thermal damage on work wafer. In SD, laser beam power of transmissible wavelength is absorbed only around focal point in the wafer by utilizing temperature dependence of absorption coefficient of the wafer. And these absorbed power forms modified layer in the wafer, which functions as the origin of separation in followed separation process. Since only the limited interior region of a wafer is processed by laser beam irradiation, damages and debris contaminants can be avoided in SD. Besides characteristics of devices will not be affected. Completely dry process of SD is another big advantage over other dicing methods.
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