Abstract
This paper reports the advanced design of an extended GaN HEMT Doherty power amplifier (DPA). For high efficiency over a wide output power range, the DPA is designed using two cells with uneven saturation power (P sat ). A cell with lower P sat is used as the carrier cell. For experimental validations, the carrier and peaking cells are designed and implemented with 25-W GaN HEMTs at world interpretability for microwave access (WiMAX) band of 2.6 GHz, and then show the P sat of 40.9 dBm and 43.8 dBm, respectively. For the proposed DPA, the continuous wave results show the power-added efficiency (PAE) of 37.5% at an output power of 36 dBm (10-dB back-off power from P sat ). For a WiMAX signal, the PAE of 36.9% with an relative constellation error (RCE) of −31 dB is obtained at 36 dBm, which is 7.8% improvement compared to the conventional DPA.
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