Abstract
This paper introduces the advanced compact MOSFET (ACM) model, a physically based model of the MOS transistor, derived from the long-channel transistor model presented by Cunha et al. (1998). The ACM model is composed of very simple expressions, is valid for any inversion level, conserves charge and preserves the source-drain symmetry of the transistor. Short-channel effects are included using a compact and physical approach. The performance of the ACM model in benchmark tests demonstrates its suitability for circuit simulation.
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