Abstract
Metal-organic chemical vapor deposition (MOCVD) epitaxial layers (n-GaN, InGaN/GaN multiple quantum well (MQW) and p-GaN) of GaN based green light emitting diodes (LEDs) structures have been sequentially grown on c-plane sapphire substrate with slight misorientation from the c plane. The qualities of these sequentially grown epitaxial layers show a strong dependence of the misorientation. Structural and optical characterization demonstrate the improved qualities of the epitaxial layers at 0.30 deg misorientation angle from c plane sapphire. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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Schedule a callMore From: Physica Status Solidi A-applications and Materials Science
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