Abstract
AlGaAs/GaAs heterostructures are the base of many semiconductor devices. The fabrication of new types of devices demands heterostructures with special features, such as large total thickness (~20 μm), ultrathin layers (~1 nm), high repeatability (up to 1000 periods) and uniformity, for which a conventional approach of growing such heterostructures is insufficient and the development of new growth procedures is needed. This article summarizes our work on the metalorganic vapour-phase epitaxy (MOVPE) growth of AlGaAs/GaAs heterostructures for modern infrared devices. The growth approaches presented allow for the improved output characteristics of different emitting devices such as multi active region lasers, epitaxially integrated via highly doped tunnel junctions (emission wavelength λ ~ 1 μm), quantum cascade lasers (λ ~10 μm) and THz laser (λ ~100 μm), based on short-period superlattice with 500–2000 layers.
Highlights
AlGaAs/GaAs heterostructures are widely used in various electronic and optoelectronic applications [1,2]
Heterostructures for Lasers Emitting at ~1 μm Residual strains in the AlGaAs/GaAs heterostructures begin to play a notable role with an increase of the overall thickness, as illustrated by the following cases
The results suggest that abrupt heterointerfaces and good repetitiveness were achieved for thick AlGaAs/GaAs superlattise heterostructures during the whole long-time metalorganic vapour-phase epitaxy (MOVPE)-growth process
Summary
AlGaAs/GaAs heterostructures are widely used in various electronic and optoelectronic applications [1,2]. The AlGaAs/GaAs material system is thoroughly investigated and traditionally considered to be ideal from the viewpoint of matching the lattice constants of the semiconductor substrate and epitaxial layers This material system usually does not require any special technical procedures for mechanical stresses controlling during the growth of high-quality epitaxial layers for the conventional device heterostructures. The interface quality of AlGaAs/GaAs heterostructures is acceptable, but the modern devices require controlling formation of ultrathin layers with high repeatability. This demands the development of new technical approaches for the creation of new types of semiconductor devices, even in the well-known. Several practical examples of metalorganic vapour-phase epitaxy (MOVPE) growth of such AlGaAs/GaAs heterostructures will be briefly discussed
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