Adsorption performance and gas-sensing properties of V-GaSe to SF6 decomposition components in gas-insulated switchgear

Abstract

In this paper, we present a study of the adsorption and sensing performances of V atom-doped GaSe (V-GaSe) gas sensor towards the decomposition products of SF6. The decomposition products include H2S, SO2, SO2F2, and SOF2. Firstly, we compared the doping structures, band structures, and state densities of GaSe and V-GaSe sensors. Subsequently, we comparatively explored the adsorption structure and energy, charge transfer, density of state, molecular orbitals, and charge distribution of the two sensors. The results indicate that the V-GaSe sensor has a higher conductivity and a greater gas adsorption capacity than the GaSe sensor. The decomposition products are physically adsorbed by the V-GaSe sensor, and the adsorption ability and gas sensitivity of the V-GaSe sensor towards the individual decomposition product is sorted as SOF2 > SO2F2 > SO2 > H2S. The study proves that the V-GaSe gas sensor exhibits excellent adsorption of the decomposition products of SF6, enabling it a promising tool for monitoring the insulation condition of gas-insulated switchgear (GIS).