Abstract
The adsorption of metalorganics and hydrides on compound semiconductor surfaces, which is the initial stage of the surface reaction during vapor-phase epitaxial growth, is discussed on the basis of the time-of-arrival (TOA) spectra of pulsed trimethylgallium (TMG) and ammonia beams scattered from variously reconstructed GaAs surfaces. Although metalorganics and hydrides have quite different physical properties, all the TOA spectra obtained are explained well within the framework of precursor-mediated adsorption. The depth of the precursor state is predominantly determined by the electrostatic interaction originating from the surface charge distribution expected by the electron-counting criterion on GaAs. The sticking of molecules is classified according to the stability of the surface structure. Moreover, we find in this study that even stable ammonia is efficiently stuck on a gallium-rich GaAs(111)B surface, which implies the mechanism of surface catalytic dissociation.
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