Adsorption on perfect and reduced surfaces of metal oxides

Abstract

Two major chemical processes, acidobasic and redox, track the adsorption mechanism on metal oxides. Molecular and dissociative adsorption on stoichiometric surfaces can be understood as acid–base processes. Clean and anhydrous surfaces of metal oxides have two different active sites: cations and anions. Electron-rich molecules or fragments arising from a heterolytic bond cleavage (Lewis bases) react with M n+ , while electron poor ones (Lewis acids) react with O 2−. The MgO and TiO 2 surfaces clearly appear to be predominantly acidic and molecules that do not dissociate generally bind to the metal cation. The electronic structure, insulating character for the stoichiometric surface, is preserved upon adsorption. When the initial system does not favor an energy gap (open-shell adsorbates, defective surfaces), the best adsorption mode is via a redox mechanism that restores the situation of an insulator and the highest oxidation states for all the atoms. For radical adsorption a first solution occurring on irreducible oxides is to couple the electrons and form two opposite ions adsorbed on the two surface sites, as for H 2/MgO, involving an acid–base mechanism. Another possibility occurring on reducible oxide is via an electron transfer to or from the oxide (redox mechanism). The electron transfer occurs from the substrate to the adsorbate for electronegative group (Cl adsorption on O) or the other way around for an electropositive one (NO adsorption on M). The reactivity at surfaces deviating from stoichiometry differs from that on the perfect ones. The difference does not only originate from the modification of the coordination number but also from the electron counting.