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Abstract
We have investigated possible water forms on stepped Si(100) surface. Calculations are performed by using the empirical tight-binding method. Two types of adsorption model of water on stepped Si(100) surface have been considered; one of them is the dissociative type (H, OH) and the other is the molecular type (H 2O). The results of the density of states supported by total electronic energy calculations indicate a dissociative type of water adsorption on the stepped Si(100) surface.
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