Abstract
Adsorption and diffusion of Si atoms on a hydrogen-terminated Si(0 0 1)-2×1 surface is studied using scanning tunneling microscopy/spectroscopy and first-principles total-energy calculations. We find that the Si atoms randomly adsorb at the bridge site of Si dimers forming SiH 2 clusters at room temperature, and move into the off-centred inter-bridge site after annealing at 250 °C.
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