Abstract
The interaction of O2 and CO2 with the Si(111)-7×7 surface has been studied with X-ray photoelectron spectroscopy (XPS). It was found that both O2 and CO2 molecules can readily oxidize the Si(111)-7×7 surface to form thin oxide films. Two oxygen species were identified in the oxide film: oxygen atoms binding to on-top sites of adatom/rest atoms with an O 1s binding energy of ~533eV as well as to bridge sites of adatom/rest atom backbonds at ~532eV. These two oxygen species can be interconverted thermally during the annealing process. Due to the low oxidation capability, the silicon oxide film formed by CO2 has a lower O/Si ratio than that of O2.
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