Abstract
The adsorption of methylcyclopentadienylindium (CpMeIn) on the gallium-rich gallium arsenide (100) surface has been studied with electron energy loss spectroscopy (EELS), Auger electron spectroscopy (AES), and ellipsometry. It has been found that a close packed layer of CpMeln (approximately 2 × 10 14 molecules/cm 2) is adsorbed at 290 K. Heating of the crystal at 770 K, after saturation of the surface, results in the formation of a carbon-containing layer and a loss of indium. If the saturated surface is exposed to hydrogen atoms at room temperature, the indium signal remains unaltered (AES) while a decrease in the concentration of the methylcyclopentadienyl groups (EELS, AES) is observed. Ellipsometric measurements at 632.8 nm show no compensation of surface dangling bonds upon adsorption of CpMeln, contrary to results obtained with trimethylgallium and triethylgallium on GaAs(100).
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
