Abstract
The mechanism of Cs adsorption on GaAs(110) has been investigated by multiple surface techniques set up under ultra high vacuum conditions. Using a modified Auger electron spectrometer which allows us to monitor continuously the variation of the Auger peaks with time, it was found that Cs grows on GaAs(110) in layer by layer fashion under incident constant flux. Equilibrium adsorption isobar plots reveal two surface phases in the first Cs monolayer. The first phase is characterized by high isosteric adsorption heat and low entropy and the second phase by low isosteric adsorption heat and high entropy. Low energy electron diffraction observations confirm this result where the first phase corresponds to two in-registry structures and the second phase to an out-of-registry structure. Work function measurements and previously published results of thermal desorption spectroscopy and electron loss spectroscopy are coherent with thermodynamic and structural studies. CsGaAs binding energies are also computed following the Levine—Gyftopoulos phenomenological model, and are found to be in satisfactory agreement with the experimental values.
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