Abstract
The interaction of atomic hydrogen (deuterium) was studied by nuclear reaction analysis and Rutherford backscattering-channeling analysis. The hydrogen coverage as a function of exposure is found to exhibit a plateau at about 2.0 monolayers. The coverage continues to increase with further exposures of atomic hydrogen (deuterium), a consequence of localized etching of the silicon surface. The channeling data show that the Si(100)-2\ifmmode\times\else\texttimes\fi{}1 surface is highly strained. The strains parallel to the (100) surface are mostly removed on the ``saturated'' bulklike Si(100)-1\ifmmode\times\else\texttimes\fi{}1-H surface.
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