Abstract
The initial steps of ultrahigh vacuum deposition of Al on cleaned Si (111) kept at room temperature were studied using low-energy electron diffraction (LEED), Auger electron spectroscopy (AES) and photoemission yield spectroscopy (PYS). It is shown that the new crystallographic order, the decrease of both the work function and the ionisation energy, and the change of the density of states at the interface can be explained by the covalent bonding between Al atoms and Si surface atoms and its distortions with changes in coverage.
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