Abstract
The initial steps of ultrahigh vacuum deposition of Al on cleaned Si (111) kept at room temperature were studied using low-energy electron diffraction (LEED), Auger electron spectroscopy (AES) and photoemission yield spectroscopy (PYS). It is shown that the new crystallographic order, the decrease of both the work function and the ionisation energy, and the change of the density of states at the interface can be explained by the covalent bonding between Al atoms and Si surface atoms and its distortions with changes in coverage.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.