Abstract
The electronic and optical properties of metal (M) atoms adsorbed GaAs nanowires are systemically investigated utilizing first-principles calculations based on density functional theory. Different materials (M = Pt, Ag, Al and Au) and different coverages (1M, 2M, 3M and 4M) are considered to construct surface adsorption models. The calculations show that all metal-adsorbed GaAs nanowire surfaces are stable, and the difficulty of metal atom adsorption on nanowire surfaces follows the rule of Ag > Au > Al > Pt. In addition, the layer distance variation of nanowire surfaces after metal atom adsorption mainly take place near the outmost layer region. In 1M coverage case, the work function is reduced by Pt, Ag, Al adsorption, while increased by Au adsorption. Specially, Pt- and Al-adsorbed GaAs nanowire surfaces are direct band gap semiconductors, but Ag- and Au-adsorbed surfaces are indirect band gap. The adsorption of metals on GaAs nanowire surfaces are via chemisorption. Moreover, metal atom adsorption can enlarger the absorption coefficient of GaAs nanowires, which are gradually enhanced with increasing the coverage of metal atoms.
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