Abstract
Distinct adsorption effects on ESR and conductance have been observed for doped amorphous silicon films prepared by rf sputtering under high Ar gas pressure. Donor- and acceptor-like adsorbates cause the change of the occupation profile of electrons in localized gap states, resulting in the changes of ESR and conductance. These results would be due to a relatively small density of localized gap states in these films and also to the largeness of the effective surface area because of the porosity of the sample films.
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