Abstract
The reactivity of tetrahydrofuran (THF) on Si(001) was measured as a function of kinetic energy, surface temperature, and THF exposure. The initial sticking coefficient s0 drops with increasing kinetic energy indicating an overall non-activated adsorption pathway. At constant kinetic energy, s0 is insensitive on surface temperature TS below 400K but decreases with increasing TS above 400K. This behavior is quantitatively described using the Kisliuk model for molecules trapped in an intermediate adsorption state and discussed in the context of a datively bonded intermediate in the reaction channel.
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